Microwave plasma chemical vapor deposition furnace
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This equipment with excellent performance of high degree of ionization, high electron temperature and electron density, wide applicable pressure range, no internal electrode contamination
Microwave plasma chemical vapor deposition furnace
This equipment with excellent performance of high degree of ionization, high electron temperature and electron density, wide applicable pressure range, no internal electrode contamination, the microwave plasma has wide range of application in the field of material surface treatment, preparation of diamond films, chemical vapor deposition, etching and methane reforming hydrogen, long-lasting phosphorescent materials, ceramic sintering, carbon nano tube modified, nano powder synthesis and processing of water pollution.
Vertical reactor design allows a high plasma density, symmetrical microwave generating device produce a more uniform plasma environment.
There is no internal electrode in resonator of microwave plasma CVD furnace; it could avoid contamination generated by electrode discharge, furthermore, with wide operation pressure range, high density and large area of plasma and high stability, as there is no contact with vacuum wall, it avoid pollution to the films from vacuum wall.
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